Abstract
Electrical and infrared (IR) properties of hydrogenated amorphous germanium (a-Ge:H) films prepared by reactive ion beam sputtering of a high-purity crystalline germanium target under varying deposition conditions have been studied. Minimum conductivity (10 -4ω -1cm -1) a-Ge:H films have been obtained for H 2:Ar flow ratio of 16:1 at a substrate temperature of 250°C. The films show an activated-type conduction (with an activation energy of 0.36 eV) and a hydrogen concentration of about 11 at.%. The IR spectra reveal absorption bands corresponding to both monohydride (Ge-H) and dihydride (GeH 2) groups. The monohydride absorption band is, however, completely absent in films deposited at 350°C for the same H 2:Ar flow ratio. X-ray diffraction analysis shows that these films are microcrystalline and show an enhanced electrical conductivity (4.0×10 -3ω -1cm -1) with decreased activation energy (0.29 eV).
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