Abstract
Recent papers on amorphous germanium films have indicated that both contact and substrate material may play a crucial role in determining the structure, and hence the resistivity, of deposited films particularly during anneal. Electron diffraction and resistivity results are presented on the effect of various contact materials on the properties of amorphous germanium, silicon and boron films. It is found that noble metal contacts cause crystallization of the amorphous film; resistivity results using these contacts during anneal showed an irreversible increase in the film resistivity. Resort to refractory metal contacts increased the crystallization temperature, enabling reversible resistivity-temperature curves to be obtained.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
