Abstract
Electrical resistivity, Hall coefficient, Hall mobility and carrier concentration of tellurium films (500 Å to 1350 Å) deposited onto glass substrate were measured simultaneously in-situ at temperatures from 40°C to 125°C. TEM studies revealed that the films deposited at 125°C have most of their crystallites oriented with c axis parallel to the plane of the glass substrate. The films were always p-type and the carrier mobility was found to vary exponentially with temperature. The values of activation energy were found to be dependent on film thickness and the Hall mobility was found to be equal to (410±100) cm2/V·s.
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