Abstract
Ultra-shallow ion implanted Si wafers, both with and without Ge pre-amorphization, were annealed using xenon arc flash lamps. The duration of flash illumination was controlled between 1ms and 20ms. Changes in sheet resistance and dopant profiles after flash anneal were measured and investigated, along with crystal defect densities. Sheet resistance was measured using a four-point probe. Dopant depth profiling and defect characterization were done using secondary ion mass spectroscopy (SIMS) and cross-sectional transmission electron microscopy (XTEM). Sheet resistance values of 250–350Ω/sq. at a junction depth of 24nm (at B concentration of 1.0×1018cm−3) were achieved. No significant dopant diffusion was observed after the Xe arc flash lamp annealing.
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