Electric subbands in narrow gap semiconductors

Abstract

In the foregoing sections the present state of our knowledge of electric subbands in tellurium accumulation and inversion layers was discussed in some detail because it was thought that it demonstrates the difficulties which arise in narrow gap semiconductors with several energy bands to be taken into account. The existence of various, interacting ban s makes both the interpretation of experimental data and the theoretical calculations more difficult. In n-type silicon, where usually only a single subband is occupied (electrical quantum limit) such difficulties do not arise. The purpose of this article was also to point out that in spite of the re tively complicated band structure of tellurium it has been possible to interpret the existing data. The results on n-type inversion layers also show that surface data can yield band structure information which is not available from bulk data.