Abstract
Electric resistance change of indium-tin oxide (ITO) film was investigated when dielectric oxide films such as Sr(Zr0.2Ti0.8)O3 and Y2O3 for an electroluminescent device were deposited on the ITO by the rf magnetron sputtering method using oxide ceramic targets. In order to understand the mechanism of the resistance change, a dc voltage of -70∼+70 V was biased to an ITO film during the sputtering of dielectric oxide films. The resistance of the ITO film became higher in the positive bias region. The cause of the increase in resistance of the ITO films was confirmed to be oxidation by the oxide targets and the sputtering gas. The amount of the resistance change could be qualitatively explained by the ratio of the oxygen introduced into the ITO film and the combined oxygen forming O2 gas at the ITO surface incident to the ITO film at the sputtering of the dielectric oxide films.
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