Abstract
We report on the dielectric properties of BaxSr1−xTiO3 (BST) films grown by molecular beam epitaxy on epitaxial Pt bottom electrodes. Paraelectric films (x ≲ 0.5) exhibit dielectric losses that are similar to those of BST single crystals and ceramics. Films with device quality factors greater than 1000 and electric field tunabilities exceeding 1:5 are demonstrated. The results provide evidence for the importance of stoichiometry control and the use of a non-energetic deposition technique for achieving high figures of merit of tunable devices with BST thin films.
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