Abstract
Electronic structures of individual β-FeSi2 nanodots were investigated using electric field modulation spectroscopy combined with scanning tunneling microscopy (STM-EFMS) by optimizing experimental conditions to enhance the inherently small signal due to a small number of photocarriers generated in a single nanodot. The obtained STM-EFMS spectra in different schemes for electric field modulation exhibited common features around 0.73 eV, which agreed well with the indirect absorption edge of β-FeSi2 bulk crystal. Maps of the STM-EFMS signal prove that the 0.73 eV signal arises from individual nanodots with a spatial resolution of a few nanometers. Those results strongly suggest that the present β-FeSi2 nanodots are indirect semiconductors.
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