Abstract
Electric field modulation spectroscopy using scanning tunneling microscopy (STM-EFMS) measurements were performed for a Si(1 1 1) surface with epitaxially-grown β-FeSi 2 islands. STM-EFMS spectra acquired around the indirect energy gap of Si reproduced the photon energy peak position observed in conventional macroscopic EFMS experiments. However, a considerable discrepancy was found in the energy position of the accompanying spectral dip. We examined two possibilities for the cause of this discrepancy. The first interpretation is that the STM-‘EFMS’ spectra may simply reflect the local density of states based on essentially the same principle as that of tunneling spectroscopy. However, this interpretation is ruled out by the facts that almost identical STM-EFMS spectra are obtained also out of the regime of tunneling. The second interpretation is a spectral distortion due to a large electric field steadily built in the sample surface, which is supported experimentally by a spectral shift of the dip energy that is induced by altering the tip-induced band bending.
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