Abstract
The electric field-modulation of the spontaneous emission (SE) and amplified spontaneous emission (ASE) in organo-lead halide perovskite CH3NH3PbI3 (aliased as MAPbI3) layer has been investigated. With the increase of the external applied electric field, the electric field-induced quenching of the SE and ASE intensity was observed, accompanying with a blue-shift of the ASE emission peaks, which can be attributed to field-induced ionization of photogenerated excitons in the MAPbI3 layer. Based on the analysis of quenching factor and the dielectric constant, we estimated an exciton binding energy ∼36 meV at room temperature, which will provide useful insights into the optical-electrical characteristics of MAPbI3 and pave the way for the future optoelectronic applications.
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