Electric Field Mitigation in High-Voltage High-Power IGBT Modules Using Nonlinear Conductivity Composites

Abstract

Wide bandgap (WBG) semiconductor devices are developing rapidly due to their superior performance compared to traditional silicon-based devices. However, the packaging technology of traditional devices has limited the application of WBG semiconductor devices because of the challenges in electrical insulation. The complex environment of high blocking voltage, high frequency, and high temperature is the major reason for insulation failure of encapsulation structure. Therefore, in this article, an epoxy resin composite with nonlinear conductivity is proposed to be used as a coating to improve the electric field distribution of high-voltage high-power IGBT modules. First, an electrical field simulation model was built considering the thermal stress. It was found that the electric field in high temperature was improved compared with that in room temperature due to the temperature-dependent conductivity of silicone gel. Nevertheless, the risk of insulation failure still exists. After the application of nonlinear conductivity materials (NCMs) coating, the maximum electric field at the triple junctions and the ratio of electric field distortion in high field areas were significantly decreased. Further analysis showed that the optimization ratio of electric field increased with the increase of the blocking voltages or power losses in the IGBT chip. The results have demonstrated that the NCMs can reduce the maximum electric field in the IGBT encapsulation structure by 73% under the operating conditions of 120 W 10 kV. Partial discharge (PD) tests show that the partial discharge initial voltage (PDIV) of the substrates with NCM coating is increased by 33% compared with the normal encapsulation structure and the coating significantly inhibits the growth of electric trees. The presented results indicate that the NCMs have the potential to improve the insulation performance of high-voltage high-power IGBT modules.