Abstract
A VO2 thin film has been prepared using a DC magnetron sputtering method and annealing on an F-doped SnO2 (FTO) conductive glass substrate. The FTO/VO2/FTO structure was fabricated using photolithography and a chemical etching process. The temperature dependence of the I–V hysteresis loop for the FTO/VO2/FTO structure has been analyzed. The threshold voltage decreases with increasing temperature, with a value of 9.2V at 20°C. The maximum transmission modulation value of the FTO/VO2/FTO structure is 31.4% under various temperatures and voltages. Optical modulation can be realized in the structure by applying an electric field.
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