Abstract
W-doped V2O5 thin film was prepared by sol-gel method and post annealing process on fluorine-doped SnO2(FTO) conductive glass substrate. The FTO/W-V2O5/FTO sandwiched structure was fabricated on FTO substrate using photolithography and a chemical etching process. The crystallinity, surface morphology and photoelectric properties of the composite films were tested under different temperatures and applied voltages. The transmittance difference of FTO/W-V2O5/FTO composite film at the wavelength of 750 nm is 11.24% from 23 °C to 300 °C without voltage applied. Under the applied voltage of 5V, the transmittance difference can reach 13.50% from 23 °C to 300 °C. After repeated application of voltage and heating, the structure still maintains stable performance and has good electrical and thermal control capabilities. It is expected to be applied in new optoelectronic devices.
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