Abstract
The electric field gradient (EFG) in Mg2SiO4 is calculated on the basis of the extended point ion model, including the local term of the overlap contribution. The agreement with experimental data deduced from the quadrupole coupling constants and principal axes at the Mg sites is quite good. The results of the present calculation exhibit a small overlap contribution to the EFG at M1 and a clearly bigger one at M2, whereas the lattice contribution to the EFG at M1 and M2 is reversed. The distinct overlap effects are assumed to be due to the particular Mg2SiO4 crystal structure and the different point symmetry at M1 and M2. The oxygen polarizability and charge used to calculate the EFG tensor were found to be smaller than the theoretical polarizability and formal charge, respectively. The sign of the Mg quadrupole coupling constants at M1 and M2, which has not been determined experimentally, results from the EFG calculation as positive.
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