Abstract
We present the results of effective mass calculations for the optical properties of single and stacked InGaAs quantum dots (QD) in the presence of a longitudinal electric field. We have empirically included the effect of inhomogeneity in the In distribution. This effect leads to inverted electron-hole mean vertical positions (i.e. the holes lay above the electrons). We have calculated the variation of the fundamental interband transitions with the electric field, as well as the absorption spectrum, taking into account Gaussian fluctuations in the vertical and lateral dimensions.
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