Abstract
We report the development and characterization of graphene/LaAlO3/SrTiO3 heterostructures. Complex-oxide heterostructures are created by pulsed laser deposition and are integrated with graphene using both mechanical exfoliation and transfer from chemical-vapor deposition on ultraflat copper substrates. Nanoscale control of the metal-insulator transition at the LaAlO3/SrTiO3 interface, achieved using conductive atomic force microscope lithography, is demonstrated to be possible through the graphene layer. LaAlO3/SrTiO3-based electric field effects using a graphene top gate are also demonstrated. The ability to create functional field-effect devices provides the potential of graphene-complex-oxide heterostructures for scientific and technological advancement.
Highlights
We report the development and characterization of graphene/LaAlO3/SrTiO3 heterostructures
One unique property of LAO/STO heterostructures is the existence of a sharp metal-insulator transition (MIT) at a critical thickness[8] of approximately four unit cells of LAO
If the LAO layer is maintained to be slightly less than this critical thickness (∼3 unit cells), the interface can be locally and reversibly switched between the conductive and insulating states using a conductive atomic force microscope (c-AFM) lithography technique.[23,24]
Summary
We report the development and characterization of graphene/LaAlO3/SrTiO3 heterostructures. Mengchen Huang,[1] Giriraj Jnawali,[1] Jen-Feng Hsu,[1] Shonali Dhingra,[1] Hyungwoo Lee,[2] Sangwoo Ryu,[2] Feng Bi,[1] Fereshte Ghahari,[3] Jayakanth Ravichandran,[3] Lu Chen,[1] Philip Kim,[3] Chang-Beom Eom,[2] Brian D’Urso,[1] Patrick Irvin,[1] and Jeremy Levy1,a 1Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, Pennsylvania 15260, USA 2Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, USA 3Department of Physics, Harvard University, Cambridge, Massachusetts 02138, USA
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