Electric field effect on the carrier capture of deep traps in p-type InP

Abstract

The electric field effect on the carrier capture cross section of deep traps has been studied. The experimental results on the H4F and H5 hole traps in p-type InP show an enhancement of the capture cross section with the increase in the applied electric field. This enhancement depends on the nature of the deep traps and its peak temperature. Increasing the electric field from 4.1×106 to 2.4×107 V/m leads to an increase in the H4F capture cross section by a factor of 3 to 20. While in the case of H5 it increases by a factor of 2 to 5 by increasing the applied electric field from 8.0×106 to 2.4×107 V/m. A theoretical model has been suggested to explain the electric field effect on the capture cross section. This model deals with the cascade and multiphonon processes semiclassically. Applying this model to the above deep traps, we have found that H4F is negatively charged complex and H5 is positively charged complex.