Abstract
We have studied the effect of external electric field on the transient response of the intrinsic photoconductivity of n-InSe single crystals with various initial 77-K dark resistivities (ρd). The results demonstrate that the behavior of the intrinsic photoconductivity of the crystals depends on both ρd and applied voltage. In low electric fields, the predominant process in both the low-resistivity and high-resistivity crystals is the capture of current carriers at stoichiometric point defects in low and higher electric fields, respectively. At the same time, in the high-resistivity crystals in high electric fields the influence of partial disorder related to the layered crystal structure of the material should be taken into account.
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