Abstract
We propose a technique for electric-field-controlled nuclear magnetic resonance (NMR) using a heterostructure constructed from diluted magnetic semiconductors. The effect on NMR of a bias voltage on an (In,Mn,As)As∕AlSb system is calculated using first-principles electronic structure methods. The calculations show that the hyperfine field at the antisite As is very sensitive to an external electric field. This technique can be used to control nuclear spins in quantum computer that uses nuclear spins as its quantum bits.
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