Abstract
The electric-field dependence of the oscillator strengths of the Stark-ladder transitions of a GaAs(3.2 nm) AlAs(0.9 nm) superlattice embedded in a p-i-n structure has been investigated by systematically measuring the electroreflectance and photocurrent spectra at 77 K. The electric-field dependence of the electroreflectance intensities and that of the photocurrent ones are found to be similar to each other. They exhibit peak profiles, and the electric fields at the peak maxima remarkably depend on the Stark-ladder index. The intensity profiles are discussed by comparison with the electric-field dependence of the theoretical oscillator strengths of the Stark-ladder transitions based on a simplified tight-binding model.
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