Abstract
Perpendicular exchange bias (PEB) is an essential effect of antiferromagnetic materials. It has the advantages over the in-plane exchange bias in application of magnetic random access memory (MRAM) technology, particularly in terms of higher packing density. The influence of the strain effect on PEB of Ta/Pt/Co/Ir20Mn80/Pt multilayers deposited on the piezoelectric substrate is studied in this work. It is found that the exchange bias field (Hex) can be regularly regulated by the strain effect introduced by the piezoelectric substrate. It indicates that the uncompensated spins at the interface of Ir20Mn80/Co can be reoriented under the strain effect, resulting in the variation of Hex. Furthermore, we propose a MRAM device structure based on the strain-mediated PEB, which enables field-free magnetization switching driven by the pure strain. Our study demonstrates the controllability of PEB and its application in spintronics, providing a method for the development of antiferromagnetic material-based next generation MRAM.
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