Abstract
Cu2O nanoporous films are deposited on porous anodic alumina (PAA) substrates by DC-reactive magnetron sputtering. This paper focuses on voltage driven magnetization switching in Cu2O/PAA (CP) composite films prepared by DC-reactive magnetron sputtering. By applying a dc electric field, the magnetization of the CP composite films can be controlled in a reversible and reproducible way and shows an analogous on-off behavior. The magnitude of the change in the magnetization was about 75 emu/cm3 as the electric field was switched on and off. Resistive switching behavior was also observed in as-prepared CP composite films. Further analysis indicated that the formation/rupture of conducting filaments composed of oxygen vacancies is likely responsible for the changes in the magnetization as well as in the resistivity. Such reversible change of magnetization controlled by an electric field at room temperature may have applications in spintronics and power efficient data storage technologies.
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