Electric Field and Surface Potential Analytical Modeling of Novel Double Gate Triple Material PiN Tunneling Graphene Nano Ribbon FET (DG-TM-PiN-TGNFET)

Abstract

A new two-dimensional analytical model for surface potential, electric field, band-to-band (B2B) tunneling rate and transconductance of a novel double gate triple material PiN tunneling graphene nano-ribbon field effect transistor (DG-TM-PiN-TGNFET) is proposed in this work. This physics-based analytical model incorporates the effects of different gate metal work functions, gate and drain voltages, body thickness and insulator thickness. In this model, the gate region has been divided into three segments where three different metals with different metal work functions are used. The purpose of using different work functions is to restrict the drain-source reverse tunneling. Low band-gap material viz. graphene is used as nano-ribbon to tune the energy band-gap as less as possible. This expands the tunneling window, where band-to-band tunneling (B2B) is considered to take place largely across source-channel region. This practice not only boost the ON current but also control the leakage current (Ambipolarity). It further improves the ON/OFF switching ratio for making this model suitable as fast switching device. Two-dimensional non-linear Poisson’s equation is derived to model electrostatic potential and electric field along the channel. Analytical results are compared with simulated DG-TM-PiN-SiTFET and proposed DG-TM-PiN-TGNFET for validation of work. Silvaco T-CAD numerical device simulator is used for simulation purpose.