Abstract
An electrically induced electron paramagnetic resonance signal is reported, which is observed at grain boundaries of multicrystalline solar silicon. The characteristic properties are a phase shift of 180° relative to the P° signal and a superlinear increase of the intensity with microwave power. These properties can be qualitatively explained by a model of Koshelev et al., which was developed for conducting dislocations. This signal is considered to be the evidence for electrical conductivity of grain boundaries at low temperatures (20 K). Es wird uber ein elektrisch induziertes Elektronenspinresonanz-Signal berichtet, das an Korngrenzen in multikristallinem Solarsilizium beobachtet wird und sich durch eine Phasenlage von 180° relativ zum P°-Signal sowie durch eine uberproportional mit der Leistung wachsende Amplitude auszeichnet. Diese Eigenschaften konnen von einem von Koshelev et al. fur leitfahige Versetzungen entwickelten Modell qualitativ erklart werden. Danach wird dieses Signal als Nachweis einer Tieftemperaturleit-fahigkeit (20 K) von Korngrenzen gedeutet.
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