Abstract
In this work, the electrical characteristics of grain boundaries (GBs) in multicrystalline silicon with and without iron contamination are analyzed by fixed voltage current maps and local I/V curves using conductive AFM (cAFM). I/V characteristics reveal the formation of a Schottky contact between the AFM tip and the sample surface. The impact of both, the polarity of the applied voltage and the illumination by the AFM laser on the behavior of GBs was analyzed systematically. Depending on the polarity of the applied voltage and the iron content of the sample, grain boundaries alter significantly the recorded current flow compared to the surrounding material. The results also show a clear influence of the AFM laser light on the electrical behavior of the grain boundaries. Conductive AFM measurements are furthermore compared to data obtained by electron beam induced current (EBIC), indicating that cAFM provides complimentary information.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
