Abstract
High quality Si3N4 film was formed by the nitridation of Si(110) surface using radical NH. It was found that the gate leakage current through the Si3N4 film is three orders of magnitude smaller than that through the conventional SiO2 film, and the interface states density at midgap for Si3N4/Si interface is less than 5×1010 eV-1 cm-2. High-resolution soft-X-ray-excited Si 2 p spectra were measured for the Si3N4 films formed on Si(100), Si(110) and Si(111). It was found that the crystal orientation of the Si substrate affects the amount of intermediate nitridation states of Si at the Si3N4/Si interface.
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