Electric and magnetic properties of magnetic (CoFeTaB)(100−x)Ox films

Abstract

By the controlling of oxygen flow rate, the oxygen content has been altered in the (CoFeTaB)(100−x)Ox system, a newly reported possible magnetic semiconductor. The electric and magnetic properties of (CoFeTaB)(100−x)Ox films are dependent on the oxygen content of (CoFeTaB)(100−x)Ox films. The resistivity of the grown (CoFeTaB)(100−x)Ox films could be altered from 3.77×10−4 Ω·cm to insulator. Correspondingly, the magnetic behavior of the grown (CoFeTaB)(100−x)Ox films was varied from ferromagnetism to paramagnetism. The increase in the resistivity was mainly attributed to the enhanced oxidization of metal Co; and the magnetism conversion was resulted from the decrease of ferromagnetic Fe3+ and increase of paramagnetic Co2+ in the grown films. These findings provide the fundamental reference for tailoring the electric and magnetic properties of (CoFeTaB)(100−x)Ox materials for potential applications in spintronics.