Abstract
We present the control of magnetostriction and magnetization of the magnetostrictive thin film via additional electric field with original low magnetic field for microelectromechanical systems (MEMS) application. To examine the electric field effect on the magnetostrictive thin film deposited on each substrate, Si and polyimide (Kapton, Dupont Corp.) substrates are used. During the measurement of magnetization and magnetostriction, 0-to 50-V electric fields are applied under 0.5-T magnetic fields. As a result, 3% of magnetostriction is enhanced compare with no electric field.
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