Abstract
In seeking an explanation of the mechanism for recording multivariate optical signal in PROM type systems (where the active layer is a sensitive electrooptical material) we have been studying conditions of the creation and destruction of the electret states in some ferroelectrics (LiNbO3 and Ba2NaNb5O15) with barrier and insulating contacts. The field, temperature, concentration and time dependence of the electret states and the main characteristics of traps responsible for electret states were determined.The results have been explained on the assumption that either with a decrease in temperature, the traps are partly converted into recombination centers, or the traps have a barrier and their occupation is a function of temperature.
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