Abstract
An analytical formulation of elastic strain in epitaxially grown crystalline film was derived. The concept of anisotropic in-plane strain was included in the method, which is applicable to the investigation of strained films with an anisotropic defect configuration or fabrication-induced anisotropic stress. The developed method applies to arbitrary crystal classes with arbitrary surface orientations.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
