Abstract
The elastic properties of CaSi 2 are studied by X-ray analysis of strained silicide films grown by reactive deposition epitaxy on Si(111). The diffraction linewidths are found to be mainly determined by heterogeneous strain with negligible size broadening. Homogeneous strain is induced by lattice mismatch for epitaxial films thinner than 50 nm, and is thermally induced for thicker films. The isotropic and anisotropic Poisson ratios of CaSi 2 are determined as v = 0.123(7) and v c = 0.105(35), respectively.
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