Abstract
Transfer printing, a promising method for fabricating multi-scale structures on various substrates such as semiconductors and polymers, has been used to fabricate flexible devices with performance superior to that of conventional organic flexible devices. Although thin films might be expected to suffer damage during the transfer printing process, no reports of the degradation of mechanical properties during transfer printing have been published. The change in mechanical properties before and after transfer printing should be evaluated in terms of reliability and design for transfer printing to be successful. We propose a method of fabricating freestanding 200-nm-thick single-crystal silicon (SCS) thin-film specimens using transfer printing in order to investigate the mechanical properties of the transferred SCS thin-film specimens. The fabrication method combines several techniques such as semiconductor manufacturing, liftoff, and transfer printing processes. The core technology in this method is the fabrication of freestanding SCS thin-film structures suspended between two fixed ends. The mechanical properties of the freestanding SCS thin-film structures were measured using a microtensile machine capable of optical strain measurement. The test results provide insight into device design and reliability evaluation of flexible electronics fabricated by nanotransfer printing.
Published Version
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