Abstract
Sulfur ions were implanted into a semi-insulating GaAs wafer at 50 keV at a dose of 1×1015 cm−2. The implanted GaAs wafer was annealed at temperatures of 650–1000 °C for 15 min. Deep levels were measured in regions with carrier concentrations lower than 3×1017 cm−3, after layers of various thicknesses were removed from the surface of the wafer. The dominant defects in samples annealed at temperatures lower than 850 °C were EL2 and EL6, while 1000 °C annealed samples exhibited isolated EL2 and EL3 defects. Isolated EL2 defects were observed in regions of carrier concentrations lower than 1×1017 cm−3, and EL3 defects were observed in regions of carrier concentrations higher than 2×1017 cm−3.
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