Einige möglichkeiten zur änderung des übertragungsfaktors eines mikrowellendurchgangselementes

Abstract

After a survey of some methods for the alteration of the transmission factor of a microwave transducer element by means of monocyrstalline Germanium at room temperature the results of an accurate investigation of the magnetic barrier effect are given. It can be shown that the change in electric conductance of a thin rectangular Germanium wafer—produced by the magnetic barrier effect—as a function of the Lorentz field applied to the wafer and as a function of wafer thickness passes through an optimal value. By making the best use of this magnetic barrier effect in a rectangular waveguide at 10 Gc/s the value of the transmission factor could be changed by 25·5 db and the phase of the transmission factor by about 160°. The angle between the Germanium wafer and the waveguide axis was arranged to be 30° in order to reduce reflection. The change in transmission factor achieved by means of the magnetic barrier effect is considerably larger than that achieved by the other methods mentioned here.