Eightwise Switching Mechanism in Memristive SrTiO3Devices and Its Implications on the Device Performance

Abstract

Filamentary‐type resistive switching devices based on the valence change mechanism (VCM) have been studied extensively during the past decades, due to their great performance as nonvolatile memories and their promising nature for novel computing architectures. For many materials exhibiting the VCM, two different polarities can be observed, namely, counter‐eightwise and eightwise switching. The more technologically relevant materials, such as TaOxand HfOx, usually exhibit the counter‐eightwise resistive switching mode, however, the nature of its abrupt switching limits the potential for their implementation in more analog systems. On the contrary, the eightwise resistive switching mode exhibits a more gradual switching profile, which makes it a more suitable candidate for neuromorphic and in‐memory computing applications. Contrary to its counterpart, the eightwise switching mode has not been fully understood for several years, hampering the improvement of memristive devices based on this mode. This review presents the major advancements that have been made to understand the mechanism behind the eightwise switching mode and its implications on the properties of the memristive devices. The works presented here are based on the model system of SrTiO3, however, the obtained knowledge and the strategies to tailor their properties can be transferred to other technologically relevant systems.