Abstract
V-doped and undoped SrTiO3 (V:STO and STO) thin films on Pt/Ti/SiO2/Si substrates were synthesized using a sol–gel method to form metal–insulator–metal (MIM) structures. Coexistence of the bipolar and unipolar resistive switching (BRS and URS) modes in Pt/STO/Pt and Pt/V:STO/Pt structures was observed as a irreversible transition from BRS to URS on adjustment of the compliance current (Icomp). Both states were stable and reproducible over 60 cycles, and the maximum operating voltage of the Pt/STO/Pt was reduced from 10 V to 2 V by doping with V. Linear fitting of current–voltage curves suggests that space-charge-limited leakage was the limiting leakage mechanism for these two devices. Based on these results, a switching mechanism based on filament theory is proposed to explain both resistive switching modes.
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