Abstract
A set of hydrodynamic transport equations, which govern a physical model for GaAs transferred electron devices, are formulated using phenomenological transport parameters derived from large scale Monte Carlo particle simulations. A fast and efficient numerical solution method is developed, allowing inexpensive and systematic investigations of a wide variety of TED samples under many operating conditions. The method not only permits insight into important semiconductor transport processes, but also permits the identification of candidate device samples for microwave and millimeter wave circuit applications.
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