Abstract

Based on the active coupled line concept, a novel approach for efficient signal and noise modeling of millimeter-wave field-effect transistors is proposed. The distributed model considers the effect of wave propagation along the device electrodes, which can significantly affect the device performance especially in the millimetre-wave range. By solving the multi-conductor transmission line equations using the Finite-Difference Time-Domain technique, the proposed procedure can accurately determine the signal and noise performance of the transistor. In order to demonstrate the proposed FET model accuracy, a distributed low-noise amplifier was designed and tested. A model selection is often a trade-off between procedure complexity and response accuracy. Using the proposed distributed model versus the circuit-based model will allow increasing the model frequency range.

Highlights

  • Efficient Computer-Aided Design (CAD) of high-frequency systems is critically based on the performance of their internal component models

  • The distributed model considers the effect of wave propagation along the device electrodes, which can significantly affect the device performance especially in the millimetre-wave range

  • A distributed model is proposed [9]. It includes the effect of wave propagation along the electrodes more accurately than the semi distributed model the CPU time of this model is a little higher than the slice model

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Summary

Introduction

Efficient Computer-Aided Design (CAD) of high-frequency systems is critically based on the performance of their internal component models. A full-wave timedomain analysis involving distributed elements should be considered. This type of analysis is highly time consuming [4,5,6], even if different simulation time reduction techniques have been already proposed [7]. By increasing the frequency up to the millimetre-wave range, the slice model cannot precisely model the wave propagation effect and phase cancellation phenomena. A distributed model is proposed [9] It includes the effect of wave propagation along the electrodes more accurately than the semi distributed model the CPU time of this model is a little higher than the slice model. The proposed model was demonstrated through the design of a distributed amplifier

Signal FET Modeling
C12 C22 0 0
The FDTD Formulation
Transistor Noise Correlation Matrix
N nx 1 2 2
Numerical Results
Amplifier Design and Analysis
Conclusion
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