Abstract
In this paper, an accurate modeling procedure for GaAs MESFET as active coupled transmission line is presented. This model can consider the effect of wave propagation along the device electrodes. In this modeling technique the active multiconductor transmission line (AMTL) equations are obtained, which satisfy the TEM wave propagation along the GaAs MESFET electrodes. This modeling procedure is applied to a GaAs MESFETs by solving the AMTL equations using Finite-Difference Time-Domain (FDTD) technique. The scattering parameters are computed from time domain results over a frequency range of 20-220 GHz. This model investigates the effect of wave propagation along the transistor more accurate than the slice model, especially at high frequencies.
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