Abstract
With the rapid development of terahertz (THz) application systems, on-chip integrated THz devices are in high demand. In this paper, we propose an efficient way to realize THz wave on-chip quasi-perfect absorption based on destructive interference between complementary meta-atom pairs. By applying a series of complementary meta-atom pairs located on the two sides of the on-chip transmission line, it is found that both electrical and magnetic induced resonances are excited simultaneously when the electromagnetic wave transmits through the line. Because of destructive interference among the resonances of the complementary meta-atom pairs, a strong absorption can be achieved. Both the experimental and simulated studies show that nearly 100% absorption can be realized within the on-chip fin line. Furthermore, greater than 90% absorption from 0.207 to 0.217 THz with a bandwidth of 10 GHz can be achieved during the experiment. Combining meta-atoms with the transmission line may provide a promising way to develop the on-chip THz devices.
Published Version
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