Efficient THz emission from the grating coupled AlGaN/GaN heterostructure on sapphire substrate

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In this work the emission spectra of the AlGaN/GaN heterostructures with large area metallic grating electrodes were obtained over the frequency range 10-500 cm-1 and at 300-400 K. Comparative analysis revealed that the emission spectrum below 10 THz was described by the black body radiation model. Indistinct radiation modified with 2DEG plasma resonances was observed only for 7 μm period grating couplers below 3 THz. Measurements of the absolute optical power from the grating-coupled AlGaN/GaN emitter indicated the possibility to achieve an electrical-to-optical conversion efficiency of up to 10-3.