Abstract
We demonstrate efficient spin injection into GaAs across an Fe3O4 electrode. Spin polarization of electrons injected into a GaAs quantum well becomes significantly large below 120 K, reaching a value of 33% at 10 K. The large spin polarization is likely due to spin filtering effect across the insulating ferrimagnetic Fe3O4 layer at the interface. The results indicate that spin filtering effect across Fe3O4 is a very promising means to enhance the spin injection efficiency into semiconductors.
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