Abstract

Metal halide perovskites have gained significant attention as a hopeful research area for developing perovskite light-emitting diodes. Achieving high-quality and cost-effective perovskite light-emitting diodes is crucial for their commercialization. This report focuses on an effective postprocessing approach that enhances the performance of perovskite emissive thin films without the need for vacuum equipment. By employing annealing and plasma treatment, the method successfully reduces grain size, and increases photoluminescence quantum yield, carrier recombination rate, external quantum efficiency (∼20.5 %), and luminance (∼68000 cd/m2) of the perovskite emitters (MAPbBr3). The proposed technique offers a time-efficient and economical solution for fabricating efficient commercial devices.

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