Abstract
We report significant improvement in terahertz (THz) power and efficiency using photoconductive sources by use of a spatially extended line source excitation and the trap enhanced field effect that occurs in sources made on semi-insulating GaAs. The combination of high electric fields and reduced screening effects allows 10 microW of THz power to be generated with 14 mW of absorbed optical power, demonstrating nearly 0.1% optical-to-THz conversion efficiency.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
