Abstract
AbstractMetal halide perovskite light‐emitting diodes (Pero‐LEDs) have gained great attention due to their promising applications in lighting and displays. However, in their conventional three‐layered sandwich structure, some undeserved carrier behaviors, such as imbalanced carrier injection, severe carrier loss, and unstable recombination zone, limit the device's performance. Herein, a four‐layered design by inserting a nickel acetate (Ni(OAc)2) interlayer between the emitter and hole‐transport layer(HTL) to manage carrier behavior and improve radiative recombination efficiency is proposed. Specifically, the Ni(OAc)2 interlayer is poorly conductive and can partially block the hole injection, making the hole‐electron injection more balanced. And the Ni(OAc)2 interlayer avoids the direct contact between the perovskite emitter and hole transporter, reducing the interfacial carrier quenching. Moreover, the Ni(OAc)2 interlayer inhibits the electron‐migrated recombination at the hole transporter interface, confining the carrier recombination zone in the emitter layer. As a result, the corresponding Pero‐LEDs achieve a maximum external quantum efficiency (EQEmax) of 24.6% with good reproducibility, showing an average EQEmax of over 20%.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
