Abstract
AbstractIn this paper, a nonlinear modeling approach for gallium nitride high‐electron mobility transistor (GaN HEMT) on Si substrate is proposed. A reliable method has been developed to extract the extrinsic elements of the model. Its main advantage is its accuracy and dependency on only pinched‐off and unbiased S‐parameter measurements. The extrinsic elements are de‐embedded from multi‐bias S‐parameters to characterize the transistor intrinsic and construct a large‐signal model. The validity of the developed modeling approach is verified by comparing its small‐signal and large‐signal (single‐tone and two‐tone) simulations with measured data of a 2‐mm GaN HEMT on Si substrate. The model has been employed for designing a class‐AB power amplifier. A very good agreement between the amplifier simulation and measurement shows the validity of the model. Copyright © 2015 John Wiley & Sons, Ltd.
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