Abstract
In this Letter a novel passivation method for porous silicon (PS) surfaces, i.e., depositing diamond film on a PS surface by microwave plasma assisted chemical vapour deposition (MPCVD) method, is reported. The morphologies, structure and PL of CVD diamond film coated PS were characterized using scanning electron microscopy (SEM), Raman spectrum and PL spectroscope. Results indicate that efficient luminescence can be obtained from diamond film-coated porous silicon. Also, the CVD diamond film may efficiently stabilize the PL wavelength and intensity of PS, and therefore is a promising candidate for passivation of porous silicon in the future.
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