Abstract

Efficient, long pulse lasing on the XeF(C→A) electronic transition has been demonstrated in an electron beam pumped device at a moderate pump rate of ∼250 kW/cm3 . A mixture of F2, NF3, Xe, Kr, and Ar at a total gas pressure of 1.6 atm was excited with a 700-ns pulse. Lasing occurred for 400 ns during the excitation pulse. The laser spectrum showed a peak wavelength of 483 nm and a bandwidth of 16 nm. An intrinsic efficiency of 0.7% was determined. The laser output energy was 1 J. Further improvements in laser performance are expected under fully optimized conditions.

Full Text
Paper version not known

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call