Abstract
Reverse type-I core/shell quantum dots (QDs) have attracted much interest owing to their much more tunable emissions as compared with type-I QDs, thus benefiting full color display. However, the choices of the reverse type-I material are quite limited and their photoluminescence quantum yields (QYs) are still low, which restricts their further applications in optoelectronics. Here, we present the synthesis of highly bright CdxZn1-xS/CdSe reverse type-II QDs with a wide tunable emission ranging from 450 to 670 nm and a quantum yield of 61% at 638 nm. Two red quantum dot light-emitting diodes based on Cd0.1Zn0.9S/CdSe and CdSe/Cd0.1Zn0.9S have been fabricated to study the influence of energy level alignment on the device performances. The luminance and external quantum efficiency of the Cd0.1Zn0.9S/CdSe device (11412 cd/m2 and 8.23%) are much higher than that of CdSe/Cd0.1Zn0.9S one, despite its lower PL QY. Evidence shows that the reverse type-I structure benefits the charge injection into the emitting material without overcoming the large physical barrier of the outer shell, thus leading to notable improvements in device performances.
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