Abstract
Due to its extreme hardness, chemical and mechanical stability, large band gap, low dielectric constant and highest thermal conductivity, diamond film is expected to be an excellent electronic packaging material for high frequency and high power devices. Under an alcohol concentration of 0.8% and a substrate temperature of 850 °C, high quality diamond films deposited on alumina are obtained by hot filament chemical vapor deposition (HFCVD) method using the optimum parameters determined by an infrared spectroscopic ellipsometer. Prior to the deposition of diamond film, carbon ions are implanted into alumina wafers to release the residual stress between interfaces. The measurement results indicate that dielectric properties and the thermal conductivity of diamond film/alumina composites are improved further with the increase of diamond coating. When the thickness of diamond coating is up to 100 μm, dielectric constant and dielectric loss of diamond film/alumina composite are 6.5 and 1.1 × 10 − 3 , respectively. However, a thermal conductivity of 3.98 W/cm·K is obtained.
Published Version
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